Paper Title:
Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
  Abstract

In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
889-894
DOI
10.4028/www.scientific.net/MSF.556-557.889
Citation
W. Bartsch, H. Mitlehner, S. Gediga, "Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects", Materials Science Forum, Vols. 556-557, pp. 889-894, 2007
Online since
September 2007
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