1.2 kV Pin Diodes with SiCrystal Epiwafer
| Periodical | Materials Science Forum (Volumes 556 - 557) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 901-904 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.901 |
| Citation | Heu Vang et al., 2007, Materials Science Forum, 556-557, 901 |
| Online since | September, 2007 |
| Authors | Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante |
| Keywords | Breakdown Voltage, Junction Termination Extension (JTE), PiN Diode, Si Crystal |
| Price | US$ 28,- |
Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.
