Paper Title:
1.2 kV Pin Diodes with SiCrystal Epiwafer
  Abstract

Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
901-904
DOI
10.4028/www.scientific.net/MSF.556-557.901
Citation
H. Vang, C. Raynaud, P. Brosselard, M. Lazar, P. Cremillieu, J. L. Leclercq, S. Scharnholz, D. Planson, J.-P. Chante, "1.2 kV Pin Diodes with SiCrystal Epiwafer", Materials Science Forum, Vols. 556-557, pp. 901-904, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Igor Sankin, J.B. Dufrene, J. Neil Merrett, Jeff B. Casady
879
Authors: Mihai Lazar, G.C. Cardinali, Christophe Raynaud, Antonella Poggi, Dominique Planson, Roberta Nipoti, Jean-Pierre Chante
1025
Authors: Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Michele Sanmartin
Abstract:Phosphorous implanted n+/p diodes have been included in the masks for manufacturing n-MOSFET devices and processed in the same way of...
687
Authors: Gontran Pâques, Sigo Scharnholz, Jens Peter Konrath, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker
Abstract:With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN...
473
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969