Paper Title:
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
  Abstract

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes’ blocking mode behaviour.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
925-928
DOI
10.4028/www.scientific.net/MSF.556-557.925
Citation
A. Mihaila, F. Udrea, S.J. Rashid, G. Amaratunga, M. Kataoka, Y. Takeuchi, R. K. Malhan, "Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs", Materials Science Forum, Vols. 556-557, pp. 925-928, 2007
Online since
September 2007
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Price
$32.00
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