Paper Title:
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Abstract

A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively understand the experimental trends encountered in the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because its really superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (i.e., from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
93-96
DOI
10.4028/www.scientific.net/MSF.556-557.93
Citation
M. Masi, A. Veneroni, A. Fiorucci, F. La Via, G. Foti, M. Mauceri, S. Leone, G. Pistone, G. Condorelli, G. Abbondanza, G. L. Valente, D. Crippa, "Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route", Materials Science Forum, Vols. 556-557, pp. 93-96, 2007
Online since
September 2007
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Price
$32.00
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