Paper Title:
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
  Abstract

4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave testing) has been performed. The results showed that SEV-grown SiC material is suitable for bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower than 1016 cm-3 for the n-type base layer is necessary to demonstrate microwave p-i-n diodes with similar performance as the ones fabricated on commercially available CVD-grown material.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
933-936
DOI
10.4028/www.scientific.net/MSF.556-557.933
Citation
N. Camara, L.P. Romanov, A.V. Kirillov, M. S. Boltovets, A. A. Lebedev, V.V. Zelenin, M. Kayambaki, K. Zekentes, "Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum", Materials Science Forum, Vols. 556-557, pp. 933-936, 2007
Online since
September 2007
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