Paper Title:
Fabrication and Test of 3C-SiC Electrostatic Resonators
  Abstract

Silicon Carbide has proven its relevance for various MEMS and sensors devices applications. This paper presents the fabrication and the first test results of 3C-SiC electrostatic resonators actuated by applying a combination of AC and DC voltages. The recipe used for the fabrication has taken the advantage of the starting material, 3C-SiC grown on Si, which allows us to use the Si substrate as sacrificial layer to release the structures. Resonators have been fabricated by a two-step process, combining RIE ICP etching with HF wet etching. Resonators have been successfully electrostatically actuated in air-ambient condition. The resonance frequencies were clearly identified, although capacitive current created by actuation was not detected.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
949-952
DOI
10.4028/www.scientific.net/MSF.556-557.949
Citation
M. Placidi, P. Godignon, J. Esteve, N. Mestres, G. Abadal, "Fabrication and Test of 3C-SiC Electrostatic Resonators", Materials Science Forum, Vols. 556-557, pp. 949-952, 2007
Online since
September 2007
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Price
$32.00
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