Paper Title:
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
  Abstract

Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminium into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
97-100
DOI
10.4028/www.scientific.net/MSF.556-557.97
Citation
H. Pedersen, A. Henry, J. ul Hassan, P. Bergman, E. Janzén, "Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers ", Materials Science Forum, Vols. 556-557, pp. 97-100, 2007
Online since
September 2007
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Price
$32.00
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