Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers |
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| Journal | Materials Science Forum (Volumes 556 - 557) |
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| Volume | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 97-100 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.97 |
| Citation | Henrik Pedersen et al., 2007, Materials Science Forum, 556-557, 97 |
| Online since | September, 2007 |
| Authors | Henrik Pedersen, Anne Henry, Jawad Hassan, J. Peber Bergman, Erik Janzén |
| Keywords | Aluminium, CVD Epitaxial Layers, Photoluminescence (PL) |
| Abstract | Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by varying the flow of aluminium into the reactor. The layers were grown on 4H and 6H SiC substrates on both Si and C face. Low temperature photoluminescence (LTPL) has been used to characterize the layers; 6H-SiC show differences in the structure of the Al bound-exciton (Al-BE) between the two faces, suggesting that the site preference is face dependent. From the LTPL spectra the Al concentration in the layers can be estimated. |
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