Paper Title:
Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications
  Abstract

Both unipolar and injection SiC devices can be used for high voltage switching applications; it is not determined, however, for which applications one approach is preferred over the other. In this paper, simulation studies are used to compare the suitability of unipolar devices, in this case a JFET (Junction Field Effect Transistor) against an equivalent FCD (Field Controlled Diode) configuration up to very high voltages. The calculations are performed in a finite element approach, with commercial drift-diffusion software. Numerous drift layers have been simulated in a Monte-Carlo approach to ensure that the optimal design of the drift layers for different breakdown is used. In a static case, purely conductive losses in the drift layer in both unipolar and injection configuration are compared. Additionally the total losses are studied and compared in switched applications for different switching frequencies and current levels.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
975-978
DOI
10.4028/www.scientific.net/MSF.556-557.975
Citation
K. Bertilsson, C. I. Harris, "Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications", Materials Science Forum, Vols. 556-557, pp. 975-978, 2007
Online since
September 2007
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Price
$32.00
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