Paper Title:
Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
  Abstract

This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and demonstrate the device under application conditions. The all-SiC cascode circuit is made up of a low-voltage normally-off vertical JFET, and high-voltage normally on vertical JFET to form a normally-off cascode switch. In this work, a half-bridge inverter was developed with SiC cascode switches for DC to AC power conversion. The inverter uses high-side and a low-side cascode switches that are Pulse Width Modulated (PWM) from a 500 V bus to produce a 60 Hz sinusoid at the output. An inductor and a capacitor were used to filter the output, while a load resistor was used to model the steady-state current of a motor.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
979-982
DOI
10.4028/www.scientific.net/MSF.556-557.979
Citation
T. McNutt, J. Reichl, H. Hearne, V. Veliadis, M. McCoy, E. J. Stewart, S. Van Campen, C. Clarke, D. Bulgher, D. Katsis, B. Geil, S. Scozzie, "Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter", Materials Science Forum, Vols. 556-557, pp. 979-982, 2007
Online since
September 2007
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