Paper Title:
Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs
  Abstract

We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of 2.0 mm × 0.5 mm in size, which were isolated electrically from each other. The multi-chip module consists of 8 chips mounted on an AMC substrate. The drain current and the breakdown voltage of the module are over 3 A and 771 V, respectively. The turn-on time and the turn-off time are 36ns and 166ns, respectively. The module resistance is proportional to the absolute temperature to the 1.05th power.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
983-986
DOI
10.4028/www.scientific.net/MSF.556-557.983
Citation
H. Tamaso, J. Shinkai, T. Hoshino, H. Tokuda, K. Sawada, K. Fujikawa, T. Masuda, S. Hatsukawa, S. Harada, Y. Namikawa, "Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs", Materials Science Forum, Vols. 556-557, pp. 983-986, 2007
Online since
September 2007
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Price
$32.00
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