Paper Title:
High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
  Abstract

Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
987-990
DOI
10.4028/www.scientific.net/MSF.556-557.987
Citation
P. Bhatnagar, N. G. Wright, A. B. Horsfall, C. M. Johnson, M. J. Uren, K. P. Hilton, A.G. Munday, A.J. Hydes, "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes", Materials Science Forum, Vols. 556-557, pp. 987-990, 2007
Online since
September 2007
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Price
$32.00
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