Paper Title:
Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
  Abstract

The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are presented that demonstrate extremely high efficiency at a switching frequency of 500 kHz, the highest operating frequency of the ML4821.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
995-998
DOI
10.4028/www.scientific.net/MSF.556-557.995
Citation
R. L. Kelley, M. S. Mazzola, W. L. Draper, "Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET ", Materials Science Forum, Vols. 556-557, pp. 995-998, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Wei Ping Chen, Qing Yi Wang, Liang Yin, Zhi Ping Zhou
Abstract:In this work, an ASIC interface for quartz rate sensor (QRS) is introduced. Based on 0.6μm 18V N-well CMOS process, it is the first to be...
471
Authors: Kun Fang, Yao Sheng Lu, Fei Yu
Chapter 4: Electrical and Electronic Engineering, Automation and Applied Mechanics Applications
Abstract:Using CSMC 0.5μm process model, a Step-Down DC-DC converter ASIC applied to portable electronic products was designed. The peak current-mode...
255
Authors: Donatella Puglisi, Jens Eriksson, Mike Andersson, Joni Huotari, Manuel Bastuck, Christian Bur, Jyrki Lappalainen, Andreas Schuetze, Anita Lloyd Spetz
4.5 Other Devices (Sensors, Detectors, ...)
Abstract:Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene...
997