Paper Title
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Authors: John Hennessy, Tom Ryan
Abstract:Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is...
383
Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng
Abstract:Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering...
387
Authors: Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, Ekaterina N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri
Abstract:The microscopic origin of the Nx EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR parameters...
391
Authors: K. Neimontas, Kęstutis Jarašiūnas, Maher Soueidan, Gabriel Ferro, Yves Monteil
Abstract:We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111)...
395
Authors: V.S. Kiselov, Ekaterina N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk, Rositza Yakimova
Abstract:The objective of the present work is to examine the preparation and characterization of the SiC sponge obtained by direct synthesis of high...
399
Authors: Nada Habka, Veronique Soulière, Jean Marie Bluet, Maher Soueidan, Gabriel Ferro, Yves Monteil
Abstract:We report an optical investigation of cubic Silicon Carbide (3C-SiC) layers grown on 6H-SiC substrates by Chemical Vapour Deposition and...
403
Authors: Jacques Botsoa, Jean Marie Bluet, Vladimir Lysenko, Olivier Marty, Daniel Barbier, Gérard Guillot
Abstract:Photoluminescence properties of a freestanding nanoporous SiC layer obtained from bulk 6H-SiC substrate as well as SiC nanopowder consisting...
407
Authors: Bharat Krishnan, Sashi Kumar Chanda, Yaroslav Koshka
Abstract:The room-temperature photoluminescence (RTPL) was investigated in commercial nitrogen-doped 4H-SiC substrates. In a typical RTPL spectrum of...
411
Authors: Maynard J. Clouter, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke, Y. Shishkin, Stephen E. Saddow
Abstract:A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had...
415
Authors: Koichi Nishikawa, Yusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, Hiroaki Iwakuro
Abstract:With development of very-low-micropipe-density substrate, reduction of other device killer defects becomes important for large size power...
419
Showing 91 to 100 of 248 Paper Titles