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Authors: Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:We have simultaneously determined the carrier concentration, mobility, and thickness of 4H-SiC homo-epilayers with carrier concentration of...
423
Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, N.S. Savkina, Alexey N. Kuznetsov
Abstract:We present the injection electroluminescence spectra in the temperature range 290-760 K of 3C-SiC pn structure, which was fabricated by...
427
Authors: Vladimir Ilich Sankin, Andrey M. Monakhov, Pavel P. Shkrebiy
Abstract:In the 6H-SiC p+-n--n+ junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature...
431
Authors: Ivan G. Ivanov, Erik Janzén
Abstract:The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold...
435
Authors: Adam Gali, T. Hornos, M. Bockstedte, Thomas Frauenheim
Abstract:The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be...
439
Authors: T. Hornos, Adam Gali, Nguyen Tien Son, Erik Janzén
Abstract:We have investigated several aluminum-related complexes in 4H-SiC by ab initio supercell calculations. The binding energies of the defects...
445
Authors: Patrick Carlsson, Nguyen Tien Son, T. Umeda, Junichi Isoya, Erik Janzén
Abstract:The SI-5 electron-paramagnetic-resonance (EPR) centre is a dominant defect in some high-purity semi-insulating (HPSI) SiC substrates and has...
449
Authors: T. Umeda, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Junichi Isoya
Abstract:Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoretically predicted to be very stable in p-type materials....
453
Authors: Takeshi Ohshima, O. Tokunaga, Masahiko Issiki, Fumio Sasajima, Hisayoshi Itoh
Abstract:Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimation and an n-type 3C-SiC substrate fabricated by...
457
Authors: Ioana Pintilie, K. Irmscher, Ulrike Grossner, Bengt G. Svensson, Bernd Thomas
Abstract:Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by Deep Level Transient Spectroscopy...
461
Showing 101 to 110 of 248 Paper Titles