Paper Title
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Authors: Nguyen Tien Son, Patrick Carlsson, Björn Magnusson, Erik Janzén
Abstract:Vacancies, divacancies and carbon vacancy-carbon antisite pairs are found by electron paramagnetic resonance (EPR) to be dominant defects in...
465
Authors: Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, Ekaterina N. Kalabukhova, E.N. Mokhov, Francesco Mauri
Abstract:Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy...
469
Authors: Mary Ellen Zvanut, Hun Jae Chung, A.Y. Polyakov, Marek Skowronski
Abstract:Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several...
473
Authors: Hervé Peyre, Nada Habka, Veronique Soulière, Maher Soueidan, Gabriel Ferro, Yves Monteil, Jean Camassel
Abstract:We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a...
477
Authors: P. Soukiassian, F. Amy, Christian Brylinski, T.O. Mentes, A. Locatelli
Abstract:Atomic structure and morphology of 6H-SiC(0001) and 3C-SiC(100) surfaces are studied by scanning tunneling microscopy (STM), synchrotron...
481
Authors: Einar Ö. Sveinbjörnsson, Fredrik Allerstam, H.Ö. Ólafsson, G. Gudjónsson, D. Dochev, T. Rödle, R. Jos
Abstract:We demonstrate how sodium enhanced oxidation of Si face 4H-SiC results in removal of near-interface traps at the SiO2/4H-SiC interface....
487
Authors: Alexander Mattausch, T. Dannecker, Oleg Pankratov
Abstract:Using density functional theory, we investigate the 6H-SiC{0001} surfaces in the unreconstructed 1 × 1 and the H-passivated configuration....
493
Authors: R. Ramakrishna Rao, S. Balaji, Kevin Matocha, Vinayak Tilak
Abstract:In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion...
497
Authors: Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas
Abstract:The nano-characterization of thermal oxides grown on 4H-SiC is for the first time presented and analysed to derive its reliability. The...
501
Authors: Kin Kiong Lee, Gerhard Pensl, Maher Soueidan, Gabriel Ferro
Abstract:This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC...
505
Showing 111 to 120 of 248 Paper Titles