Paper Title
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Authors: Owen J. Guy, T.E. Jenkins, Michal Lodzinski, A. Castaing, S.P. Wilks, P. Bailey, T.C.Q. Noakes
Abstract:The high density of interface states of thermally grown oxides on silicon carbide has prompted research into alternative oxidation methods...
509
Authors: Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy, D. Kurt Gaskill
Abstract:Hydrogen etching of 4H-SiC has been performed in a hot-wall chemical vapor deposition reactor to reduce surface damage and to create a...
513
Authors: Fredrik Allerstam, G. Gudjónsson, Einar Ö. Sveinbjörnsson, T. Rödle, R. Jos
517
Authors: Atsumi Miyashita, Toshiharu Ohnuma, Misako Iwasawa, Hidekazu Tsuchida, Masahito Yoshikawa
Abstract:The performance of SiC MOSFET devices to date is below theoretically expected performance levels. This is widely considered to be attributed...
521
Authors: Konstantin V. Emtsev, Thomas Seyller, Florian Speck, Lothar Ley, P. Stojanov, J.D. Riley, R.C.G. Leckey
Abstract:Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED....
525
Authors: M. Hetzel, Charíya Virojanadara, Wolfgang J. Choyke, Ulrich Starke
Abstract:Ordered reconstruction phases on the 4H-SiC(1102) surface have been investigated using low-energy electron diffraction (LEED), Auger...
529
Authors: M. Silly, H. Enriquez, J. Roy, M. D'Angelo, P. Soukiassian, T. Schuelli, M. Noblet, G. Renaud
Abstract:In order to give experimental insights on the atomic structure of the Si atomic wires developing on the β-SiC(100) surface, we use...
533
Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Helmer Fjellvåg, Bengt G. Svensson
Abstract:Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant and tri-methyl-aluminum (TMA)...
537
Authors: Peter Deák, T. Hornos, Christoph Thill, Jan Knaup, Adam Gali, Thomas Frauenheim
Abstract:Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that...
541
Authors: Filippo Giannazzo, Fabrizio Roccaforte, S.F. Liotta, Vito Raineri
Abstract:We present a novel approach based on conductive atomic force microscopy (c-AFM) for nano-scale mapping of the Schottky barrier height (SBH)...
545
Showing 121 to 130 of 248 Paper Titles