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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

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• p885 The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes   [ 380 K ]
  Authors: Shin Harada, Yasuo Namikawa
• p889 Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects   [ 788 K ]
  Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga
• p895 Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications   [ 310 K ]
  Authors: Brett A. Hull, Joseph J. Sumakeris, Mrinal K. Das, Jim Richmond, John J. Palmour
• p901 1.2 kV Pin Diodes with SiCrystal Epiwafer   [ 551 K ]
  Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante
• p905 Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation   [ 1019 K ]
  Authors: Dorothea Werber, P. Borthen, Gerhard Wachutka
• p909 Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes   [ 722 K ]
  Authors: Aurelie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, Konstantinos Zekentes
• p913 Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions   [ 155 K ]
  Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Shigeomi Hishiki, Toshio Hirao, Toshio Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, Günter Wagner, Hisayoshi Itoh
• p917 Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes   [ 257 K ]
  Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti
• p921 Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process   [ 220 K ]
  Authors: Pavel A. Ivanov, Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John J. Palmour, Mrinal K. Das, Brett A. Hull
• p925 Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs   [ 196 K ]
  Authors: Andrej Mihaila, F. Udrea, S.J. Rashid, G. Amaratunga, Mitsuhiro Kataoka, Yuuichi Takeuchi, Rajesh Kumar Malhan
• p929 Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS   [ 251 K ]
  Authors: Akihiro Egami, Masami Shibagaki, Akira Kumagai, Kenji Numajiri, Shingo Miyagawa, Takahiro Kudo, Satoshi Uchiumi, Masataka Satoh
• p933 Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum   [ 470 K ]
  Authors: Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets, Alexander A. Lebedev, V.V. Zelenin, M. Kayambaki, Konstantinos Zekentes
• p937 Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers   [ 250 K ]
  Authors: P. Lark, Konstantin Vassilevski, Irina P. Nikitina, G.J. Phelps, Alton B. Horsfall, Nicolas G. Wright
• p941 4H-SiC High Temperature Spectrometers   [ 434 K ]
  Authors: Evgenia V. Kalinina, Nikita B. Strokan, Alexander M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev
• p945 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect   [ 574 K ]
  Authors: Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, S.F. Liotta, Sergio Billotta, Giovanni Bonanno, Massimiliano Belluso