Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
doi:10.4028/www.scientific.net/MSF.556-557
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p1011
Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
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692 K
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Authors: Jon M. Hancock -
p1017
Advances in AlGaN/GaN/SiC Microwave Devices
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268 K
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Authors: Michael J. Uren, Martin Kuball -
p1023
A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
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720 K
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Authors: Seung Yong Lee, Tae Hong Kim, Duk Il Suh, Ji Eun Park, Eun Kyung Suh, Chang Hee Hong, Sang Kwon Lee -
p1027
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
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697 K
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Authors: Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, A. Alberti, Vito Raineri -
p1031
Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
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307 K
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Authors: Gholam Reza Yazdi, Mikael Syväjärvi, Remigijus Vasiliauskas, Rositza Yakimova -
p1035
Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
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185 K
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Authors: Akira Nakajima, Shuichi Yagi, Mitsuaki Shimizu, Kazuhiro Adachi, Hajime Okumura -
p1039
Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
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217 K
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Authors: Koichi Amari, Jun Suda, Tsunenobu Kimoto -
p1043
Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
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553 K
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Authors: Hiroyuki Sazawa, Tomohisa Kato, Kazutoshi Kojima, K. Furuta, K. Hirata, M. Kosaki, M. Kinoshita, Takeshi Mitani, Shinichi Nakashima, Hajime Okumura
