Paper Title
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Authors: Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier
Abstract:In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different...
721
Authors: Lilyana Kolaklieva, Roumen Kakanakov, Iva Avramova, Ts. Marinova
Abstract:Electrical, morphological and chemical properties of nanolayered Au/Ti/Al ohmic contacts with different Ti:Al ratio are investigated....
725
Authors: Kenneth M. Robb
Abstract:In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been...
729
Authors: S. Takenami, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
Abstract:Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by a Cl2-O2 thermal etching method. The etching rate of 4H-SiC...
733
Authors: Oleg Korolkov, Natalja Sleptsuk, Toomas Rang, A. Syrkin, Vladimir Dmitriev
Abstract:For more authentic comparison of Schottky parameters between combined sputter (Ti/Ni/Au) and diffusion welded (DW) Al contact and direct DW...
737
Authors: Yue Ke, Robert P. Devaty, Wolfgang J. Choyke
Abstract:We have fabricated columnar nano-porous SiC by photo-electrochemical etching on the C-face of n-type 6H SiC at constant voltage. SEM ...
741
Authors: C.K. Young, G.T. Andrews, Maynard J. Clouter, Yue Ke, Wolfgang J. Choyke, Robert P. Devaty
Abstract:Brillouin light scattering spectroscopy was used to probe porous silicon carbide films formed from p-type 6H crystalline silicon carbide....
745
Authors: Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi, Junji Murata, Kazuto Yamauchi
Abstract:We report the damage-free planarization of 4H-SiC (0001) wafers using a new planarization technique we named CAtalyst-Referred Etching...
749
Authors: Tomohisa Kato, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Tomonori Miura, Shin Ichi Nishizawa, Kazuo Arai
Abstract:We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of...
753
Authors: Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi, Takeshi Ishida, Kenta Arima, Akihisa Kubota, Yuzo Mori
Abstract:Silicon carbide (SiC) is a promising semiconductor material for power devices. However, it is so hard and so chemically stable that there is...
757
Showing 171 to 180 of 248 Paper Titles