Silicon Carbide and Related Materials 2006
| Paper Title | Page |
|---|---|
|
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén |
53 |
|
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process Authors: James D. Oliver, Brian H. Ponczak |
57 |
|
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Authors: Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov |
61 |
|
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers Authors: Maher Soueidan, Gabriel Ferro, Bilal Nsouli, Nada Habka, Veronique Soulière, Ghassan Younes, Khaled Zahraman, Jean Marie Bluet, Yves Monteil |
65 |
|
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates Authors: Mike F. MacMillan, Mark J. Loboda, Jian Wei Wan, Gil Yong Chung, E.P. Carlson, Michael J. Spaulding, D. Deese |
69 |
|
CVD of 6H-SiC on Non-Basal Quasi Polar Faces Authors: Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad ul Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow |
73 |
|
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices Authors: Joseph J. Sumakeris, Brett A. Hull, Michael J. O'Loughlin, Marek Skowronski, Vijay Balakrishna |
77 |
|
Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient Authors: Masahiko Ito, Hidekazu Tsuchida, Isaho Kamata, L. Storasta |
81 |
|
Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth Authors: Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai |
85 |
|
Authors: René A. Stein, Bernd Thomas, Christian Hecht |
89 |
