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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

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• p133 Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive   [ 192 K ]
  Authors: Huang De Lin, Galyna Melnychuk, Jeffery L. Wyatt, Yaroslav Koshka
• p137 Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization   [ 725 K ]
  Authors: Lucia Calcagno, Gaetano Izzo, Grazia Litrico, G. Galvagno, A. Firrincieli, Salvatore Di Franco, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, F. Portuese, Giuseppe Abbondanza, Gaetano Foti, Francesco La Via
• p141 Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices   [ 354 K ]
  Authors: L.B. Rowland, Greg Dunne, Jody A. Fronheiser, Stanislav I. Soloviev
• p145 Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System   [ 269 K ]
  Authors: Jian Wei Wan, Mark J. Loboda, Mike F. MacMillan, Gil Yong Chung, E.P. Carlson, V.M. Torres
• p149 Selective Epitaxial Growth of 4H-SiC with SiO₂ Mask by Low-Temperature Halo-Carbon Homoepitaxial Method   [ 869 K ]
  Authors: Bharat Krishnan, Hrishikesh Das, Huang De Lin, Yaroslav Koshka
• p153 SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties   [ 795 K ]
  Authors: Chi Kwon Park, Gi Sub Lee, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino
• p157 Very High Growth Rate Epitaxy Processes with Chlorine Addition   [ 146 K ]
  Authors: Francesco La Via, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa
• p161 SiC Heteropolytype Structures Grown by Sublimation Epitaxy   [ 446 K ]
  Authors: Alexander A. Lebedev
• p167 Carbonization of Porous Silicon for 3C-SiC Growth   [ 750 K ]
  Authors: A.V. Vasin, Yukari Ishikawa, Noriyoshi Shibata, Jarno Salonen, Vesa Pekka Lehto
• p171 Carbonization Study of Different Silicon Orientations   [ 607 K ]
  Authors: Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, Gaetano Foti, Francesco La Via
• p175 Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates   [ 1 M ]
  Authors: Alexander A. Lebedev, V.V. Zelenin, Pavel L. Abramov, Elena V. Bogdanova, Sergey P. Lebedev, D.K. Nel'son, Boris S. Razbirin, M.P. Scheglov, Alla S. Tregubova, Mikael Syväjärvi, Rositza Yakimova
• p179 Heavily Doped Polycrystalline 3C-SiC Growth on SiO₂/Si (100) Substrates for Resonator Applications   [ 509 K ]
  Authors: Guo Sheng Sun, Jin Ning, Xing Fang Liu, Yong Mei Zhao, Jia Ye Li, Lei Wang, Wan Shun Zhao, Liang Wang
• p183 Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD   [ 160 K ]
  Authors: Hideki Shimizu, Akira Kato
• p187 How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism   [ 1 M ]
  Authors: Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Patrick Chaudouët, Didier Chaussende, Bilal Nsouli, Yves Monteil
• p191 Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive   [ 354 K ]
  Authors: M. Reyes, Y. Shishkin, S. Harvey, Stephen E. Saddow