Paper Title
Page
Authors: S. Katakami, Makoto Ogata, Shuichi Ono, Manabu Arai
Abstract:The electrical characteristics of a SiC-MESFET are affected by the channel structure characteristics, such as impurity density and...
803
Authors: Hiroshi Yano, H. Nakao, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
807
Authors: Gary Pennington, Siddharth Potbhare, Neil Goldsman, Daniel B. Habersat, Aivars J. Lelis, J.M. McGarrity, C.R. Ashman
Abstract:Electronic measurement coupled with device and material modeling of lateral longchannel 4H-SiC MOSFETs is used to investigate current...
811
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:4H-SiC lateral MOSFETs with a double reduced surface field (RESURF) structure have been fabricated in order to reduce drift resistance. A...
815
Authors: Kevin Matocha, Jesse Tucker, Steve Arthur, Michael Schutten, Jeff Nasadoski, John Glaser, Ljubisa Stevanovic
Abstract:SiC MOSFETs are characterized with a specific on-resistance of 8 m⋅cm2 at room temperature and a blocking voltage of 1500 V. Due to the...
819
Authors: In Ho Kang, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, Nam Kyun Kim
Abstract:A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by...
823
Authors: Keiko Fujihira, Naruhisa Miura, Tomokatsu Watanabe, Yukiyasu Nakao, Naoki Yutani, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Oomori
Abstract:Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body...
827
Authors: Philip G. Neudeck, David J. Spry, Liang Yu Chen, Robert S. Okojie, Glenn M. Beheim, Roger D. Meredith, Terry L. Ferrier
Abstract:While there have been numerous reports of short-term transistor operation at 500 °C or above, these devices have previously not demonstrated...
831
Authors: Amador Pérez-Tomás, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan, Narcis Mestres
Abstract:In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being...
835
Authors: Peter Tappin, Rajat Mahapatra, Nicolas G. Wright, Praneet Bhatnagar, Alton B. Horsfall
Abstract:This report investigates the advantages of high-k materials as gate dielectrics for high power SiC trench MOSFET devices, by means of TCAD...
839
Showing 191 to 200 of 248 Paper Titles