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Authors: Maurizio Masi, Alessandro Veneroni, A. Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa
Abstract:A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively...
93
Authors: Henrik Pedersen, Anne Henry, Jawad ul Hassan, Peder Bergman, Erik Janzén
Abstract:Epitaxial layers were grown in a horizontal hot-wall CVD reactor and intentionally doped with aluminium in a wide concentration range by...
97
Authors: Jie Zhang, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, Michael S. Mazzola
Abstract:In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent...
101
Authors: N. Boutarek, Didier Chaussende, Roland Madar
Abstract:The growth of 3C-SiC polycrystal and 6H-SiC homoepitaxial layers from Metal-Si alloys is carried out as function of temperature and propane...
105
Authors: Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li
Abstract:Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the...
109
Authors: Ho Keun Song, Han Seok Seo, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, Sun Young Kwon, Hoon Joo Na, Hyeong Joon Kim
Abstract:The authors attempted to grow a semi-insulating SiC epitaxial layer by in-situ vanadium doping. The homoepitaxial growth of the...
113
Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry
Abstract:The lateral expansion of thin homoepitaxial cantilevers from mesas has been used to produce areas of on-axis 4H-SiC completely free of...
117
Authors: Brian H. Ponczak, James D. Oliver, Soon Cho, Gary W. Rubloff
Abstract:A quadrupole mass spectrometer unit was utilized to accurately detect the chemical species present inside a SiC CVD reactor growth chamber...
121
Authors: Brenda L. VanMil, Kok Keong Lew, Rachael L. Myers-Ward, Ronald T. Holm, D. Kurt Gaskill, Charles R. Eddy
Abstract:Real-time analysis of downstream nitrogen process-gas flows during 4H-SiC growth is reported. A Hiden Analytical HPR-20 quadrupole...
125
Authors: T. Hori, Katsunori Danno, Tsunenobu Kimoto
Abstract:Fast homoepitaxial growth of 4H-SiC has been carried out on off-axis (0001) substrates by horizontal hot-wall CVD at 1600οC. High growth...
129
Showing 21 to 30 of 248 Paper Titles