Paper Title
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Authors: Huang De Lin, Galyna Melnychuk, Jeffery L. Wyatt, Yaroslav Koshka
Abstract:Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was further developed. In-situ doping with nitrogen and aluminum was...
133
Authors: Lucia Calcagno, Gaetano Izzo, Grazia Litrico, G. Galvagno, A. Firrincieli, Salvatore Di Franco, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, F. Portuese, Giuseppe Abbondanza, Gaetano Foti, Francesco La Via
Abstract:High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si...
137
Authors: L.B. Rowland, Greg Dunne, Jody Fronheiser, Stanislav I. Soloviev
Abstract:Cold-wall vapor phase epitaxy was utilized to grow uniform 4H-SiC layers with abrupt doping interfaces on 4o off-axis substrates....
141
Authors: Jian Wei Wan, Mark J. Loboda, Mike F. MacMillan, Gil Yong Chung, E.P. Carlson, V.M. Torres
Abstract:A SiC epitaxy process based on chlorosilane/propane chemistry has been successfully transferred from a single-wafer R&D system to a...
145
Authors: Bharat Krishnan, Hrishikesh Das, Huang De Lin, Yaroslav Koshka
Abstract:Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below 13000C using CH3Cl precursor offered a promise of new...
149
Authors: Chi Kwon Park, Gi Sub Lee, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino
Abstract:A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power...
153
Authors: Francesco La Via, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa
Abstract:The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the...
157
Authors: Alexander A. Lebedev
Abstract:In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having...
161
Authors: A.V. Vasin, Yukari Ishikawa, Noriyoshi Shibata, Jarno Salonen, Vesa Pekka Lehto
Abstract:In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of...
167
Authors: Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, Gaetano Foti, Francesco La Via
Abstract:3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to...
171
Showing 31 to 40 of 248 Paper Titles