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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

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• p383 Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers   [ 489 K ]
  Authors: John Hennessy, Tom Ryan
• p387 Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer   [ 182 K ]
  Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng
• p391 Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations   [ 587 K ]
  Authors: Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, E.N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri
• p395 Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range   [ 990 K ]
  Authors: K. Neimontas, Kestutis Jarašiūnas, Maher Soueidan, Gabriel Ferro, Yves Monteil
• p399 Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis   [ 276 K ]
  Authors: V.S. Kiselov, E.N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk, Rositza Yakimova
• p403 Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS   [ 218 K ]
  Authors: Nada Habka, Veronique Soulière, Jean Marie Bluet, Maher Soueidan, Gabriel Ferro, Yves Monteil
• p407 Photoluminescence of 6H-SiC Nanostructures   [ 997 K ]
  Authors: Jacques Botsoa, Jean Marie Bluet, Vladimir Lysenko, Olivier Marty, Daniel Barbier, Gérard Guillot
• p411 Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques   [ 284 K ]
  Authors: Bharat Krishnan, Sashi Kumar Chanda, Yaroslav Koshka
• p415 Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates   [ 634 K ]
  Authors: Maynard J. Clouter, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke, Y. Shishkin, Stephen E. Saddow
• p419 Reverse Biased Electrochemical Etching of SiC-SBD   [ 2 M ]
  Authors: Koichi Nishikawa, Yusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, Hiroaki Iwakuro
• p423 Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy   [ 747 K ]
  Authors: Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
• p427 Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure   [ 174 K ]
  Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, N.S. Savkina, Alexey N. Kuznetsov
• p431 The Premature Breakdown in 6H-SiC p-n Junction   [ 157 K ]
  Authors: Vladimir I. Sankin, Andrey M. Monakhov, Pavel P. Shkrebiy
• p435 Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide   [ 240 K ]
  Authors: Ivan G. Ivanov, Erik Janzén
• p439 Point Defects and their Aggregation in Silicon Carbide   [ 1 M ]
  Authors: Adam Gali, T. Hornos, M. Bockstedte, Thomas Frauenheim