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Authors: M. Obernhofer, Michael Krieger, Frank Schmid, Heiko B. Weber, Gerhard Pensl, Adolf Schöner
Abstract:Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the...
343
Authors: Laurent Ottaviani, Damien Barakel, Eugene B. Yakimov, Marcel Pasquinelli
Abstract:This paper presents results of investigations about the influence of Hydrogen (introduced by annealing or plasma implantation), and Helium...
347
Authors: Sandrine Juillaguet, T. Guillet, R. Bardoux, Jean Camassel, Thierry Chassagne
Abstract:We report a comparison of continuous-wave photoluminescence spectra with spatiallyresolved micro-photoluminescence data collected at low...
351
Authors: Ekaterina N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, Siegmund Greulich-Weber, Uwe Gerstmann, Andreas Pöppl, J. Hoentsch, E. Rauls, Yurii Rozentzveig, E.N. Mokhov, Mikael Syväjärvi, Rositza Yakimova
Abstract:D-band electron paramagnetic resonance (EPR) measurements as well as X and Q-band field-swept Electron Spin Echo (ESE) and pulsed Electron...
355
Authors: Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, Hidehisa Hashizume
Abstract:We carried out mapping of the excess carrier lifetime for a bulk p-type 4H-SiC wafer by the microwave photoconductivity decay (μ-PCD)...
359
Authors: Jörg Pezoldt, Christian Förster, Volker Cimalla, Florentina Will, Ralf Stephan, Klemens Brueckner, Matthias A. Hein, Oliver Ambacher
Abstract:The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si...
363
Authors: Michael Krieger, Kurt Semmelroth, Heiko B. Weber, Gerhard Pensl, Martin Rambach, Lothar Frey
Abstract:We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)- doped 6H-SiC crystals at low temperatures. Admittance...
367
Authors: Andreas Gällström, Björn Magnusson, Patrick Carlsson, Nguyen Tien Son, Anne Henry, Franziska Christine Beyer, Mikael Syväjärvi, Rositza Yakimova, Erik Janzén
Abstract:The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were...
371
Authors: Andres Udal, Enn Velmre
Abstract:Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base...
375
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Showing 81 to 90 of 248 Paper Titles