A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification |
| Journal |
Materials Science Forum (Volumes 558 - 559) |
| Volume |
Recrystallization and Grain Growth III |
| Edited by |
S.-J.L. Kang, M.Y. Huh, N.M. Hwang, H. Homma, K. Ushioda and Y. Ikuhara |
| Pages |
843-850 |
| DOI |
10.4028/www.scientific.net/MSF.558-559.843 |
| Online since |
October, 2007 |
| Authors |
Tadao Watanabe, Kota Kido, Sadahiro Tsurekawa, Koichi Kawahara |
| Keywords |
Electrical Activity, Grain Boundary, Grain Boundary Engineering, Polysilicon, Solar Cell |
| Abstract |
A new approach to grain boundary engineering for photovoltaic polysilicon
has been attempted using a new processing method of unidirectional and rotational
solidification from the melt, in order to control the grain boundary microstructure and to
produce desirable bulk electrical properties. The effect of grain boundary microstructure
on bulk electrical properties of polysilicon can be more precisely evaluated by
introducing a new parameter “directional grain boundary density (DGBD)” in connection
with basic knowledge of structure-dependent grain boundary electrical properties, the
grain boundary character distribution (GBCD) and grain boundary geometrical
configuration which can be experimentally determined by Orientation Imaging
Microscopy (OIM). We report the usefulness of this approach to development of high
performance polysilicon. |
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