Paper Title:
A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification
  Abstract

A new approach to grain boundary engineering for photovoltaic polysilicon has been attempted using a new processing method of unidirectional and rotational solidification from the melt, in order to control the grain boundary microstructure and to produce desirable bulk electrical properties. The effect of grain boundary microstructure on bulk electrical properties of polysilicon can be more precisely evaluated by introducing a new parameter “directional grain boundary density (DGBD)” in connection with basic knowledge of structure-dependent grain boundary electrical properties, the grain boundary character distribution (GBCD) and grain boundary geometrical configuration which can be experimentally determined by Orientation Imaging Microscopy (OIM). We report the usefulness of this approach to development of high performance polysilicon.

  Info
Periodical
Materials Science Forum (Volumes 558-559)
Edited by
S.-J.L. Kang, M.Y. Huh, N.M. Hwang, H. Homma, K. Ushioda and Y. Ikuhara
Pages
843-850
DOI
10.4028/www.scientific.net/MSF.558-559.843
Citation
T. Watanabe, K. Kido, S. Tsurekawa, K. Kawahara, "A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification", Materials Science Forum, Vols. 558-559, pp. 843-850, 2007
Online since
October 2007
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Price
$32.00
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