Paper Title:
Thermal Behavior of Electron Irradiation Defects in CZ-Si
  Abstract

Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed.

  Info
Periodical
Materials Science Forum (Volumes 561-565)
Main Theme
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
1113-1116
DOI
10.4028/www.scientific.net/MSF.561-565.1113
Citation
H. Y. Cui, Y. X. Li, G. F. Chen, L. L. Cai, E. Zhao, "Thermal Behavior of Electron Irradiation Defects in CZ-Si", Materials Science Forum, Vols. 561-565, pp. 1113-1116, 2007
Online since
October 2007
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