Paper Title:
High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 561-565)
Main Theme
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
1181-1184
DOI
10.4028/www.scientific.net/MSF.561-565.1181
Citation
T. Sadoh, H. Kamizuru, A. Kenjo, M. Miyao, "High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain", Materials Science Forum, Vols. 561-565, pp. 1181-1184, 2007
Online since
October 2007
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Eui Tae Kim, Anupam Madhukar
Abstract:We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast...
539
Authors: Ryusuke Nakamura, Takehiro Shudo, Akihiko Hirata, Manabu Ishimaru, Hideo Nakajima
Abstract:Formation behavior of nanovoids during the annealing of amorphous Al2O3 and WO3 was studied by transmission...
541
Authors: Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li
Chapter 1: Multifunctional Materials
Abstract:We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam...
12
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439