Paper Title:
High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2
  Abstract

We have studied uniform growth of crystalline Ge films on quartz plate from VHF (60MHz)-ICP of 10% GeH4 diluted with H2 in the temperature range from 150 to 350°C. By optimizing total gas flow rate, gas pressure, VHF power and antenna-substrate distance, the growth rate as high as 7.4nm/s was obtained at 150°C and increased gradually up to ~7.9nm/s at 350°C. The crystallinity, which was evaluated by Raman scattering measurements as an integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, reached a value as high as ~93 % at 350°C, but degraded down to 64% at 150°C as a result of the formation of a 60~70nm-thick amorphous incubation (A. I.) layer on quartz. By applying a two-step deposition method at 150°C, in which the GeH4 concentration was selected to be 0.6% for the crystalline nucleation in the first 10s deposition, being as thin as 10nm in thickness, and then changed to 10% GeH4 for the high rate growth, the crystallinity was improved to 78% with keeping an effective growth rate as high as 7.5nm/s, because of a significant increase in the growth rate after the crystalline nucleation.

  Info
Periodical
Materials Science Forum (Volumes 561-565)
Main Theme
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
1209-1212
DOI
10.4028/www.scientific.net/MSF.561-565.1209
Citation
T. Sakata, K. Makihara, H. Deki, S. Higashi, S. Miyazaki, "High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2", Materials Science Forum, Vols. 561-565, pp. 1209-1212, 2007
Online since
October 2007
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