Cracking of Aluminum Nitride Film on Stainless Steel Substrate at Elevated Temperature |
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| Journal | Materials Science Forum (Volumes 561 - 565) |
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| Volume | PRICM 6 |
| Edited by | Young Won Chang, Nack J. Kim and Chong Soo Lee |
| Pages | 1221-1224 |
| DOI | 10.4028/www.scientific.net/MSF.561-565.1221 |
| Citation | Dai Nishijima et al., 2007, Materials Science Forum, 561-565, 1221 |
| Online since | October, 2007 |
| Authors | Dai Nishijima, Tatsuo Tabaru, Morito Akiyama |
| Keywords | Aluminium Nitride (AlN), Crack, Finite Element Model (FEM), Residual Stress, Thermal Stress |
| Abstract | Aluminum nitride (AlN) thin films formed on the heat-resistant alloy substrates were heated to 1100K. Cracking was observed in the AlN film formed on the stainless steel substrate (SUS430), while no crack was seen in that on the nickel-base superalloy substrate (IN750X). The electrical impedance measurements, X-ray diffraction analysis and finite element method calculation have been conducted to discuss the relationship between the cracking and the stress introduced into the AlN films. The AlN film cracking would be significantly affected by grain refinement of AlN. |
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