Large-scale silicon carbide nanowires are prepared by pure silicon powder and phenolic resin, which are mixed, molded, carbonizated, and then subjected to the microwave heating with a rate of 10oC/min between 1300 and 1400oC in the static argon atmosphere for 0.5~2h. The patterns of the SiC nanowires are characterized by means of SEM, the composition of the samples are determined through EDX. The prepared nanowires have the diameters between 20 to 100nm. The current results imply that liquid silicon can act as a catalyzer during the formation of SiC nanowires.Introduction Since the discovery of carbon nanotubes by Iijima, there has been great interest in the synthesis and characterization of other one-dimensional (1D) structures. Nanowires, nanorods and nanobelts constitute an important class of 1D nanostructures, which provide models to study the relationship between electrical transport, optical and other properties with dimensionality and size confinemen[2~7]. The 1D nanowires can also act as active components in devices as revealed by recent investigations[8,9]. Up to now, several techniques for preparing SiC nanowires have been developed. Dai et al. synthesized SiC nanorods via the reaction of carbon nanotubes with SiO. Zhou et al.  synthesized SiC nanowires by hot filament chemical vapor deposition (CVD). Liang et al. grew SiC nanowires by carbothermal reduction of silica xerogels embedded with Fe nanoparticles, etc. However, many of these routes involved complex processes and high cost. The usage of metal catalyst for the vapor–liquid–solid (VLS) growth mechanism makes it difficult to remove the resident catalyst after the synthetic process. In this paper, it is reported that a simple and low cost synthetic route is developed for the preparation of SiC nanowires by microwave heating technique without any catalyst. The prepared nanowires have core-shell structure with the diameters between 20 to 100nm. The growth of these SiC nanowires is considered to involve a VLS process.