Paper Title:
High Temperature Oxidation Behavior of MoSi2 under Low Pressure Atmosphere
  Abstract

In this study, the high temperature oxidation behavior of polycrystalline MoSi2 in a low-pressure atmosphere was investigated. Polycrystalline MoSi2 was produced by the spark plasma sintering process. Oxidation tests were carried out at 1500°C at either 10Torr or 760Torr in an Ar-20%O2 atmosphere. For both conditions, the weight change peaked at the initial oxidation stage, and then their weights gradually increased with increasing oxidation time. The sample weight became heavier in the ambient pressure than in the low-pressure, but the evaporation oxidation was not significant in the low-pressure condition. After the low-pressure oxidation tests, the formation of Mo5Si3 in the MoSi2 substrate was identified. The oxidation resistance of MoSi2 at 1500°C is discussed based on the obtained results.

  Info
Periodical
Materials Science Forum (Volumes 561-565)
Main Theme
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
427-430
DOI
10.4028/www.scientific.net/MSF.561-565.427
Citation
A. Ibano, K. Yoshimi, A. Yamauchi, R. Tu, K. Maruyama, K. Kurokawa, T. Goto, "High Temperature Oxidation Behavior of MoSi2 under Low Pressure Atmosphere", Materials Science Forum, Vols. 561-565, pp. 427-430, 2007
Online since
October 2007
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$32.00
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