Paper Title:
Defect Generation in Some Transition-Metal Silicides in Accommodating the Deviation from the Stoichiometric Compositions
| Periodical | Materials Science Forum (Volumes 561 - 565) |
|---|---|
| Main Theme | PRICM 6 |
| Edited by | Young Won Chang, Nack J. Kim and Chong Soo Lee |
| Pages | 443-446 |
| DOI | 10.4028/www.scientific.net/MSF.561-565.443 |
| Citation | Haruyuki Inui et al., 2007, Materials Science Forum, 561-565, 443 |
| Online since | October, 2007 |
| Authors | Haruyuki Inui, Katsushi Tanaka, Kyosuke Kishida, Shunta Harada |
| Keywords | Defect Engineering, Defect Structure, Semiconducting Transition-Metal Silicides, Valence Electron Counting Rule |
| Price | US$ 28,- |
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Abstract
The changes in microstructure and defect structure of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 with ternary alloying of substitutional elements with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3.
