Paper Title:
Depth Selective Electronic State Analysis of Implanted Nitrogen in Visible-Light Response TiO2 Photocatalyst
  Abstract

Energetic nitrogen ion was injected into a TiO2 photocatalyst in order to investigate the optimal local concentration of doped nitrogen for visible-light response. N+-implanted TiO2 samples promoted the photocatalytic activity under visible-light irradiation. N K-edge XANES of the highest activity sample indicated that N replaces the O sites near the surface, whereas in the samples of higher N+ fluence, N−O and/or N−N species formed. Depth-resolved N K-edge ELNES revealed the two types of N, depending on the concentration, and we found the local N concentration effective for visible-light response was less than ∼1 at%. Further, the spatial distributions of the different chemical states of N by energy-filtering TEM (FETEM) supported these findings.

  Info
Periodical
Materials Science Forum (Volumes 561-565)
Main Theme
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.561-565.567
Citation
T. Yoshida, S. Muto, J. Wakabayashi, "Depth Selective Electronic State Analysis of Implanted Nitrogen in Visible-Light Response TiO2 Photocatalyst", Materials Science Forum, Vols. 561-565, pp. 567-570, 2007
Online since
October 2007
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$35.00
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