Paper Title:
The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate
  Abstract

Silicon carbide (SiC) is a wide band gap semiconductor being developed for high temperature, high power, and high frequency device applications. For the manufacturing of SiC to semiconductor substrate, many researchers have studied on the subject of SiC polishing. However, SiC faces many challenges for wafer preparation prior to epitaxial growth due to its high hardness and remarkable chemical inertness. A smooth and defect free substrate surface is important for obtaining good epitaxial layers. Therefore, hybrid process, chemical mechanical polishing (CMP) has been proposed to achieve epi-ready surface. In this paper, the material removal rate (MRR) is investigated to recognize how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm sized diamond, and the authors tried to find the dependency of mechanical factors such as pressure, velocity and abrasive concentration using single abrasive slurry (SAS). Especially, the authors tried to get an epi-ready surface with mixed abrasive slurry (MAS). The addition of the 25nm sized diamond in MAS provided strong synergy between mechanical and chemical effects resulting in low subsurface damage. Through experiments with SAS and MAS, it was found that chemical effect (KOH based) was essential and atomic-bit mechanical removal was efficient to remove residual scratches in MAS. This paper concluded that SiC CMP mechanism was quite different from that of relatively soft material to achieve both of high quality surface and MRR.

  Info
Periodical
Edited by
Byungsei Jun, Hyungsun Kim, Chanwon Lee, Soo Wohn Lee
Pages
133-136
DOI
10.4028/www.scientific.net/MSF.569.133
Citation
H. J. Lee, B. Y. Park, H. S. Lee, S. H. Jeong, H. D. Seo, S. B. Joo, H. D. Jeong, H. J. Kim, "The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate", Materials Science Forum, Vol. 569, pp. 133-136, 2008
Online since
January 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Cong Rong Zhu, Bing Hai Lv, Ju Long Yuan
Abstract:Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of...
131
Authors: Han Chul Cho, Young Min Kim, Hyun Seop Lee, Suk Bae Joo, Hae Do Jeong
Abstract:Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and...
367
Authors: Sheng Li Wang, Zhen Xia Li, Hui Lai Mu, Yu Tian, Li Bing Yang
Abstract:Chemical mechanical polishing (CMP) is the effective technology which obtains high accuracy surface of hard disk substrate with...
3067
Authors: Heng Zhen Dai, Zhu Ji Jin, Shang Gao, Z.C. Tao
Chapter 1: Grinding Technology
Abstract:Aiming at the severe surface/subsurface damage of Al2O3ceramic ground by diamond grinding wheel, the...
270
Authors: Jian Xiu Su, Jia Xi Du, Xing Long Liu, Hai Na Liu
Abstract:SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting,...
250