Paper Title:
The Electrical Properties of PLZT Thin Films on ITO Coated Glass with Various Post-Annealing Temperature
  Abstract

Lanthanum modified lead zirconate titanate (Pb1.1La0.08Zr0.65Ti0.35O3) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by r.f magnetron sputtering method. The thin films were deposited at 500°C and annealed at various temperature (550~600°C) by rapid thermal processing. The structure and morphology of the films were characterized with X-ray diffraction and atomic force microscopy. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature increased, the remnant polarization value increased from 10.58 DC/cm2 to 31.35 DC/cm2, coercive field was reduced from 79.906 kV/cm to 60.937 kV/cm. For the switching polarization endurance analysis, the remnant polarization of PLZT thin films annealed at 700°C was decreased 15% after 109 switching cycles using 1MHz square wave form at 5V.

  Info
Periodical
Edited by
Byungsei Jun, Hyungsun Kim, Chanwon Lee, Soo Wohn Lee
Pages
169-172
DOI
10.4028/www.scientific.net/MSF.569.169
Citation
W. H. Cha, J. E. Yoon, D. H. Hwang, C. S. Lee, I. S. Lee, Y. G. Son, "The Electrical Properties of PLZT Thin Films on ITO Coated Glass with Various Post-Annealing Temperature ", Materials Science Forum, Vol. 569, pp. 169-172, 2008
Online since
January 2008
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