Paper Title:
Mechanical and Electrical Properties of Ga-Doped ZnO Films Deposited on Flexible Substrate by DC Magnetron Sputtering
  Abstract

Ga-doped ZnO films were deposited on polyethylene terephthalate (PET) substrate by dc magnetron sputtering using a high density GZO target (doped with 6.65 wt% Ga2O3) without substrate heating. We investigated electrical, structural, and mechanical properties of GZO films deposited under various total gas pressures (Ptot). GZO films deposited at Ptot of 2.0 Pa showed the lowest resistivity (2.91 x 10-2 7cm), which could be attributed to higher crystallinity of the film. Also, this GZO film showed the lowest change in resistance (8 R/R0 = 0.3) for the dynamic bending test.

  Info
Periodical
Edited by
Byungsei Jun, Hyungsun Kim, Chanwon Lee, Soo Wohn Lee
Pages
185-188
DOI
10.4028/www.scientific.net/MSF.569.185
Citation
D. Y. Lee, J. R. Lee, D. G. Kim, G. H. Lee, Y. S. Kim, P. K. Song, "Mechanical and Electrical Properties of Ga-Doped ZnO Films Deposited on Flexible Substrate by DC Magnetron Sputtering ", Materials Science Forum, Vol. 569, pp. 185-188, 2008
Online since
January 2008
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