Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates |
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| Journal | Materials Science Forum (Volume 569) |
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| Volume | Eco-Materials Processing and Design IX |
| Edited by | Byungsei Jun, Hyungsun Kim, Chanwon Lee, Soo Wohn Lee |
| Pages | 73-76 |
| DOI | 10.4028/www.scientific.net/MSF.569.73 |
| Citation | Sung Pill Nam et al., 2008, Materials Science Forum, 569, 73 |
| Online since | January, 2008 |
| Authors | Sung Pill Nam, Sung Gap Lee, Young Hie Lee |
| Keywords | Dielectric Properties, TCR, Thin Film, Tungsten, Vanadium |
| Abstract | The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K. |
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