Paper Title:
Advanced Gate Dielectric Development for VLSI Technology
  Abstract

In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
133-146
DOI
10.4028/www.scientific.net/MSF.573-574.133
Citation
Y. Ma, "Advanced Gate Dielectric Development for VLSI Technology", Materials Science Forum, Vols. 573-574, pp. 133-146, 2008
Online since
March 2008
Authors
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Price
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