Advanced Gate Dielectric Development for VLSI Technology |
|
| Journal | Materials Science Forum (Volumes 573 - 574) |
|---|---|
| Volume | Rapid Thermal Processing and beyond: Applications in Semiconductor Processing |
| Edited by | W. Lerch and J. Niess |
| Pages | 133-146 |
| DOI | 10.4028/www.scientific.net/MSF.573-574.133 |
| Citation | Yi Ma, 2008, Materials Science Forum, 573-574, 133 |
| Online since | March, 2008 |
| Authors | Yi Ma |
| Keywords | Gate Dielectric, Plasma Nitridation, Stacked Nitride Dielectrics, Stacked Oxide Dielectrics, Thermal Nitridation |
| Abstract | In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
