Paper Title:
A Growth Kinetics Model for the Radical Oxidation of Silicon
  Abstract

The silicon oxide growth kinetics were investigated for single wafer rapid thermal (RTP) and large batch vertical furnace radical oxidation processes under varying conditions. An oxidation model is proposed in which the oxidation rate of hydrogen–assisted radical oxidation is a combination of constant–rate low pressure wet oxidation and an oxygen radical driven process decaying with increasing oxide thickness. The model parameters for selected RTP and batch furnace oxidation processes are extracted and discussed. The implications of this model are compared to observed properties of the radical oxidation process like lattice orientation, stress independence, bird’s beak formation and thickness uniformity.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
147-152
DOI
10.4028/www.scientific.net/MSF.573-574.147
Citation
O. Storbeck, W. Pethe, R. Hayn, "A Growth Kinetics Model for the Radical Oxidation of Silicon", Materials Science Forum, Vols. 573-574, pp. 147-152, 2008
Online since
March 2008
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$32.00
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