Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm |
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| Journal | Materials Science Forum (Volumes 573 - 574) |
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| Volume | Rapid Thermal Processing and beyond: Applications in Semiconductor Processing |
| Edited by | W. Lerch and J. Niess |
| Pages | 153-163 |
| DOI | 10.4028/www.scientific.net/MSF.573-574.153 |
| Citation | Martin Trentzsch et al., 2008, Materials Science Forum, 573-574, 153 |
| Online since | March, 2008 |
| Authors | Martin Trentzsch, Christian Golz, Karsten Wieczorek, Rolf Stephan, Tilo Mantei, Boris Bayha, Susanne Ohsiek, Michael Raab, Zsolt Nényei, Wilfried Lerch, Jürgen Niess, Waltraud Dietl, Christoph Kirchner, Georg Roters |
| Keywords | Deuterium, Gate Dielectric, Nitrogen Concentration, Plasma Nitridation, Thermal Nitridation |
| Abstract | In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. Furthermore, we will demonstrate that ultra thin thermally nitrided GD have the potential to be an alternative solution compared to plasma nitrided GD. This work includes the analysis of physical and electrical parameters as well as reliability results from reliability characterization. Additionally, we investigated the impact of Deuterium on electrical parameters and reliability behavior. |
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