Paper Title:
High-K: Latest Developments and Perspectives
  Abstract

The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO2 for DRAM cells in MIM architecture are discussed.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
165-180
DOI
10.4028/www.scientific.net/MSF.573-574.165
Citation
A. J. Bauer, M. Lemberger, T. Erlbacher, W. Weinreich, "High-K: Latest Developments and Perspectives", Materials Science Forum, Vols. 573-574, pp. 165-180, 2008
Online since
March 2008
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