Paper Title:
Ultra Shallow Depth Profiling with SIMS
  Abstract

Secondary Ion Mass Spectrometry (SIMS) is frequently used in the characterization of thin films, coatings, diffusion processes, materials composition and in the analysis of implants. The SIMS technique has been continuously developed for more than 30 years. One of the main drivers was semiconductor technology. Standard implants in Si like B, As and P, implanted with a few keV to MeV energy are routinely measured with high precision. But nowadays with implant energies of 500 eV and below, when ultra shallow structures are examined, the desired information is in the first few nm to some tens of nm. This has a great impact on the analytical requirements and quantification procedures. Some of these aspects will be examined in this contribution.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
197-205
DOI
10.4028/www.scientific.net/MSF.573-574.197
Citation
H. U. Ehrke, "Ultra Shallow Depth Profiling with SIMS", Materials Science Forum, Vols. 573-574, pp. 197-205, 2008
Online since
March 2008
Authors
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$32.00
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