Ultra-Rapid Thermal Process for ULSIs
|Periodical||Materials Science Forum (Volumes 573 - 574)|
|Main Theme||Rapid Thermal Processing and beyond: Applications in Semiconductor Processing|
|Edited by||W. Lerch and J. Niess|
|Citation||Kyoichi Suguro, 2008, Materials Science Forum, 573-574, 319|
|Online since||March, 2008|
|Keywords||Activation, Annealing, Defect, Defect Annihilation, Diffusion, Flash Lamp Annealing, Impurity Atoms, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Rapid Thermal Annealing (RTA), Thermal Budget, Ultra Shallow Junction|
This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.