Paper Title:
Ultra-Rapid Thermal Process for ULSIs
| Periodical | Materials Science Forum (Volumes 573 - 574) |
|---|---|
| Main Theme | Rapid Thermal Processing and beyond: Applications in Semiconductor Processing |
| Edited by | W. Lerch and J. Niess |
| Pages | 319-324 |
| DOI | 10.4028/www.scientific.net/MSF.573-574.319 |
| Citation | Kyoichi Suguro, 2008, Materials Science Forum, 573-574, 319 |
| Online since | March, 2008 |
| Authors | Kyoichi Suguro |
| Keywords | Activation, Annealing, Defect, Defect Annihilation, Diffusion, Flash Lamp Annealing, Impurity Atoms, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Rapid Thermal Annealing (RTA), Thermal Budget, Ultra Shallow Junction |
| Price | US$ 28,- |
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Abstract
This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.
