Paper Title:
Doping Strategies for FinFETs
  Abstract

In this paper the formation strategies for source and drain regions in vertical FinFETs are discussed. The technology challenges are very different than for planar bulk devices. Here the main doping approaches are presented with their advantages and drawbacks. Source/drain formation by ion implantation, and deposition techniques are discussed with respect to process simplicity, and device requirements.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
333-338
DOI
10.4028/www.scientific.net/MSF.573-574.333
Citation
B. J. Pawlak, R. Duffy, A. De Keersgieter, "Doping Strategies for FinFETs", Materials Science Forum, Vols. 573-574, pp. 333-338, 2008
Online since
March 2008
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Price
$32.00
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