Paper Title:
Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
  Abstract

The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
35-43
DOI
10.4028/www.scientific.net/MSF.573-574.35
Citation
N. Stolwijk, L. Lerner, A. Giese, W. Lerch, "Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing", Materials Science Forum, Vols. 573-574, pp. 35-43, 2008
Online since
March 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Vladimir V. Popov
Abstract:Possibilities of grain-boundary diffusion and segregation studies using nuclear gammaresonance spectroscopy (NGR) are considered. It is...
497
Authors: Rodolfo A. Pérez, Patrick Gas, Philippe Maugis
Abstract:Experiments of niobium diffusion at infinite dilution and Nb reaction-diffusion in pure iron and in ferrites with different amounts of...
163
Authors: Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Isao Sakaguchi, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda
Abstract:Zinc isotopic heterostructured zinc oxide thin films of 64ZnO/68ZnO/64ZnO were synthesized using pulsed laser deposition. The pulsed laser...
193
Authors: Alain Portavoce, Ivan Blum, Lee Chow, Jean Bernardini, Dominique Mangelinck
Abstract:The measurement of diffusion coefficients in today’s materials is complicated by the down scaling of the studied structures (nanometric...
63