Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing |
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| Journal | Materials Science Forum (Volumes 573 - 574) |
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| Volume | Rapid Thermal Processing and beyond: Applications in Semiconductor Processing |
| Edited by | W. Lerch and J. Niess |
| Pages | 35-43 |
| DOI | 10.4028/www.scientific.net/MSF.573-574.35 |
| Citation | Nicolaas Stolwijk et al., 2008, Materials Science Forum, 573-574, 35 |
| Online since | March, 2008 |
| Authors | Nicolaas Stolwijk, Ludmila Lerner, Axel Giese, Wilfried Lerch |
| Keywords | Dissociative Mechanism, Kick-Out Mechanism, Self-Interstitial, Spreading-Resistance Profiling, Tracer Diffusion, Vacancy |
| Abstract | The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si. |
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