Paper Title:
High Temperature RTP Application in SOI Manufacturing
  Abstract

Significant performance enhancements are offered by silicon on insulator (SOI) or strained silicon, SOI being adopted for advanced devices in sustaining Moore’s law. Sub-45 nm device options are including fully depleted (FD) devices, that are stressing even more specifications for thickness uniformity. Nano-uniformity, considering thickness variation contributions from device level to wafer scale, has been introduced in substrate optimization and latest Unibond products are verifying FD requirements. Rapid Thermal Processing (RTP) based surface smoothing has been introduced in Unibond processing to combine thickness control and product quality requirements.

  Info
Periodical
Materials Science Forum (Volumes 573-574)
Edited by
W. Lerch and J. Niess
Pages
61-74
DOI
10.4028/www.scientific.net/MSF.573-574.61
Citation
C. Maleville, E. Neyret, D. Delprat, L. Ecarnot, "High Temperature RTP Application in SOI Manufacturing", Materials Science Forum, Vols. 573-574, pp. 61-74, 2008
Online since
March 2008
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Price
$32.00
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