Paper Title:
Life Time Predictions through X-Ray Defect Analysis of MEMS Devices
  Abstract

In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favor failure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping were used to determine the strain as well as the defect concentration in the crystal. The investigations also include the numerical simulation of deformations.

  Info
Periodical
Materials Science Forum (Volumes 584-586)
Edited by
Yuri Estrin and Hans Jürgen Maier
Pages
518-522
DOI
10.4028/www.scientific.net/MSF.584-586.518
Citation
A. Neels, P. Niedermann, A. Dommann, "Life Time Predictions through X-Ray Defect Analysis of MEMS Devices", Materials Science Forum, Vols. 584-586, pp. 518-522, 2008
Online since
June 2008
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Price
$32.00
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