In this work we studied the structural properties of SiGe alloys with different Ge molar compositions co-implanted with manganese and arsenic ions. The ions were implanted at room temperature to fluences of 1×1015, 5×1015 and 1×1016 cm–2 and energies of 170 keV (Mn) and 200 keV (As) in order to achieve the overlap of the implanted profiles. The alloys were studied with Rutherford Backscattering/Channeling spectrometry (RBS/C) and X-ray Diffraction (XRD) techniques. After implantation the implanted region (150 nm) turns into amorphous according with RBS/C. The evolution of the lattice parameter was studied using XRD. The annealing at 550°C induces the recrystallization of the amorphous layer for the sample implanted with the lower fluence and the full recovery is complete after annealing at 700°C. The samples implanted with higher fluences did not reveal any noticeable recovery. The Mn and As profiles do not exhibit significant changes during the annealing at 550oC.