Paper Title:
Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions
  Abstract

In this work we studied the structural properties of SiGe alloys with different Ge molar compositions co-implanted with manganese and arsenic ions. The ions were implanted at room temperature to fluences of 1×1015, 5×1015 and 1×1016 cm–2 and energies of 170 keV (Mn) and 200 keV (As) in order to achieve the overlap of the implanted profiles. The alloys were studied with Rutherford Backscattering/Channeling spectrometry (RBS/C) and X-ray Diffraction (XRD) techniques. After implantation the implanted region (150 nm) turns into amorphous according with RBS/C. The evolution of the lattice parameter was studied using XRD. The annealing at 550°C induces the recrystallization of the amorphous layer for the sample implanted with the lower fluence and the full recovery is complete after annealing at 700°C. The samples implanted with higher fluences did not reveal any noticeable recovery. The Mn and As profiles do not exhibit significant changes during the annealing at 550oC.

  Info
Periodical
Materials Science Forum (Volumes 587-588)
Edited by
António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira
Pages
298-302
DOI
10.4028/www.scientific.net/MSF.587-588.298
Citation
S. Magalhães, N. A. Sobolev, N. V. Abrosimov, E. Alves, "Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions", Materials Science Forum, Vols. 587-588, pp. 298-302, 2008
Online since
June 2008
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