Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique |
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| Journal | Materials Science Forum (Volumes 587 - 588) |
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| Volume | Advanced Materials Forum IV |
| Edited by | António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira |
| Pages | 308-312 |
| DOI | 10.4028/www.scientific.net/MSF.587-588.308 |
| Citation | R. Prabakaran et al., 2008, Materials Science Forum, 587-588, 308 |
| Online since | June, 2008 |
| Authors | R. Prabakaran, Hugo Aguas, Luís Pereira, E. Elangovan, Elvira Fortunato, Rodrigo Martins, Isabel Ferreira |
| Keywords | a-Si:H, Ellipsometry, FTIR, Porous Silicon (PS) |
| Abstract | In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating. |
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