Paper Title:
Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique
  Abstract

In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals the enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.

  Info
Periodical
Materials Science Forum (Volumes 587-588)
Edited by
António Torres Marques, António Fernando Silva, António Paulo Monteiro Baptista, Carlos Sá, Fernando Jorge Lino Alves, Luís Filipe Malheiros and Manuel Vieira
Pages
308-312
DOI
10.4028/www.scientific.net/MSF.587-588.308
Citation
R. Prabakaran, H. Aguas, L. Pereira, E. Elangovan, E. Fortunato, R. Martins, I. Ferreira, "Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H Using PECVD Technique", Materials Science Forum, Vols. 587-588, pp. 308-312, 2008
Online since
June 2008
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$32.00
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